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data sheet 1 of 11 rev. 04, 2007-10-31 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA191001E ptfa191001f confidential, limited internal distribution description the PTFA191001E and ptfa191001f are thermally-enhanced, 100-watt, internally-matched ldmo s fets intended for wcdma, is-95 and cdma2000 applications. they are characterized for single- and two-carrier wcdma operation from 1930 to 1990 mhz. thermally-enhanced packaging provides the coolest operation available. PTFA191001E package h-36248-2 thermally-enhanced high power rf ldmos fets 100 w, 1930 ? 1990 mhz ptfa191001f package h-37248-2 features ? thermally-enhanced packages , pb-free and rohs-compliant ? broadband internal matching ? typical two-carrier wcdma performance at 1960 mhz, 30 v - average output power = 25 w - linear gain = 17.0 db - efficiency = 27.5% - intermodulation distortion = ?37 dbc - adjacent channel power = ?41.0 dbc ? typical two-carrier is-95 performance at 1930 mhz, 30 v - average output power = 25 w - efficiency = 28% - intermodulation distortion = ?35 dbc @ 1.2288 - adjacent channel power = ?51 dbm ? typical cw performance, 1960 mhz, 30 v - output power at p?1db = 130 w - efficiency = 56% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 100?w?(cw) output power two-carrier wcdma drive-up v dd = 30 v, i dq = 900 ma, ? = 1960 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 average output power (dbm) im3 (dbc), acpr (dbc) 5 10 15 20 25 30 35 drain efficiency (%) acpr efficiency im3 *see infineon distributor for future availability.
data sheet 2 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution rf characteristics wcdma measurements (tested in infineon test fixture) v dd = 30 v, i dq = 900 ma, p out = 44 dbm average ? 1 = 1955 mhz, ? 2 = 1965 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 16 17.0 ? db drain efficiency h d 26 28 ? % intermodulation distortion imd ? ?37 ?35 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.08 ? w operating gate voltage v ds = 28 v, i dq = 900 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 417 w above 25c derate by 2.38 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 100 w cw) r q jc 0.42 c/w *see infineon distributor for future availability.
data sheet 3 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution broadband performance v dd = 30 v, i dq = 900 ma, p out = 44.0 dbm 10 15 20 25 30 35 1900 1920 1940 1960 1980 2000 2020 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss two-carrier wcdma at selected biases v dd = 30 v, ? = 1960 mhz, 3gpp wcdma signal, p/ar = 8 db, 10 mhz carrier spacing, series show i dq -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 output power, pep (dbm) 3rd order imd (dbc) 900 ma 800 ma 1.0 a 1.1 a typical performance (data taken in a production test fixture) ordering information type and version package type package description marking PTFA191001E v4 h-36248-2 thermally-enhanced slotted flange, single-ended PTFA191001E ptfa191001f v4 h-37248-2 thermally-enhanced earless flange, single-ended ptfa191001f
data sheet 4 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution intermodulation distortion products vs. tone spacing v dd = 30 v i dq = 900 ma, ? = 1960 mhz, p out = 49.5 dbm pep -60 -55 -50 -45 -40 -35 -30 -25 0 10 20 30 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th voltage sweep i dq = 900 ma, ? = 1960 mhz, tone spacing = 1 mhz, p out (pep) = 50 dbm -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 supply voltage (v) 3rd order intermodulation distortion (dbc) 10 15 20 25 30 35 40 45 50 55 gain efficiency im3 up gain (db), drain efficiency (%) typical performance (cont.) single-carrier wcdma drive-up v dd = 30 v, i dq = 900 ma, ? = 1960 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, par = 8.5 db, 3.84 mhz bw -55 -50 -45 -40 -35 33 35 37 39 41 43 45 average output power (dbm) 0 10 20 30 40 drain efficiency (%) adjacent channel power ratio (db) efficiency acpr acpr up acpr low power sweep, cw conditions v dd = 30 v, i dq = 900 ma, ? = 1960 mhz 14 15 16 17 18 0 20 40 60 80 100 120 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency t case = 25c t case = 90c
data sheet 5 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 1900 5.41 ?4.79 2.88 2.91 1930 5.23 ?4.54 2.81 3.18 1960 5.05 ?4.32 2.77 3.39 1990 4.92 ?4.06 2.80 3.63 2020 4.79 ?3.81 2.73 3.89 0 . 2 0 . 1 0 . 2 0 . 1 - w a v e l e n g t h s t o w a r d g e n e r a t o r - - - > - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 0 . 1 z load z source 2020 mhz 1900 mhz 2020 mhz 1900 mhz z 0 = 50 w is-95 two-carrier ncdma drive-up v dd = 30 v, i dq = 900 ma, ? 1 = 1962.5 mhz, ? 2 = 1960 mhz -55 -50 -45 -40 -35 -30 -25 -20 36.0 38.0 40.0 42.0 44.0 average output power (dbm) 0 5 10 15 20 25 30 35 drain efficiency (%) efficiency imd low intermodulation distortion (dbc) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.2 a 0.6 a 1.0 a 1.5 a 3.0 a 4.5 a 6.0 a 7.5 a 9.0 a typical performance (cont.)
data sheet 6 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution reference circuit reference circuit schematic for ? = 1960 mhz circuit assembly information dut PTFA191001E or ptfa191001f ldmos transistor pcb 0.76 mm [.030?] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 1960 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.352 l , 50.4 w 29.31 x 1.42 1.154 x 0.056 l 2 0.183 l , 38.0 w 14.86 x 2.16 0.585 x 0.085 l 3 0.016 l , 11.4 w 1.22 x 10.19 0.048 x 0.401 l 4 0.026 l , 60.0 w 2.16 x 0.99 0.085 x 0.039 l 5 0.213 l , 60.0 w 18.03 x 0.99 0.710 x 0.039 l 6 0.069 l , 6.9 w 5.11 x 17.86 0.201 x 0.703 l 7 0.289 l , 54.5 w 24.16 x 1.24 0.951 x 0.049 l 8 0.289 l , 54.5 w 24.16 x 1.24 0.951 x 0.049 l 9 0.040 l , 5.0 w 2.95 x 25.40 0.116 x 1.000 l 10 (taper) 0.050 l , 5.0 w / 11.8 w 3.81 x 25.40 / 9.80 0.150 x 1.000 / 0.386 l 11 (taper) 0.027 l , 11.8 w / 31.0 w 2.18 x 9.80 / 2.84 0.086 x 0.386 / 0.112 l 12 0.009 l , 31.0 w 0.76 x 2.87 0.030 x 0.113 l 13 0.034 l , 41.0 w 2.82 x 1.91 0.111 x 0.075 l 14 0.086 l , 41.0 w 7.06 x 1.91 0.278 x 0.075 l 15 0.364 l , 50.4 w 30.33 x 1.42 1.194 x 0.056 1 electrical characteristics are rounded. r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f v dd qq1 q1 r5 10 v 1f 5.1k v r6 r7 c6 v 5.1k 10 f 35v c4 c5 0.1f a191001ef_sch 10 pf l 1 l 2 l 3 l 6 l 4 10 v r9 c9 dut l 5 10 pf c8 10 pf 1 f 10 f 50v 10 pf 0.02 f 1.0 pf 1.0 pf 1.5 pf 10 pf 1 f 10 f 0.02 f v dd l 7 l 8 l 9 l 13 l 14 l 15 c10 c11 c12 c13 c18 c19 c20 c21 c17 c16 c15 c14 l 10 l 11 50v l 12 rf_in rf_out 2k v r8 0.01f c7
data sheet 7 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c11, c15 capacitor, 1.0 f digi-key 920c 105 c7 capacitor, 0.01 f digi-key 200b 103 c8, c9, c10, c14, capacitor (ceramic), 10 pf atc 100b 100 c21 c12, c16 capacitor, 0.02 f digi-key 200b 203 c13, c17 tantalum capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c18, c19 capacitor (ceramic), 1.0 pf atc 100b 1r0 c20 capacitor (ceramic), 1.5 pf atc 100b 1r5 q1 transistor infineon bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3, r8 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5, r9 chip resistor, 10 ohms digi-key p10ect-nd r6, r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd see next page for reference circuit assembly diagram
data sheet 8 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution reference circuit (cont.) *gerber files for this circuit available on request reference circuit assembly diagram* (not to scale) a191001ef_assy lm 10 35v + c1 c2 r1 r2 r8 c3 c4 r3 r4 r5 r7 rf_in rf_out c8 qq1 r6 q1 c9 c5 r9 c12 c13 c11 c10 c15 c14 v dd c18 c21 c19 c20 c17 c16 v dd v dd c6 c7 a191001ef_dtl c1 qq1 v dd r1 r2 r3 r6 c4 r7 c2 c3 c5 r5 r4 q1 + lm r8 c8 c6 c7
data sheet 9 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution package outline specifications package h-36248-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness, package h-36248-2: s, d, g - flange & leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products c l 34.04 [1.340] 19.810.20 [.780.008] 1.02 [.040] 19.43 0.51 [.765.020] (45 x 2.72 [.107]) 2x 12.70 [.500] 2x 4.830.51 [.190.020] 27.94 [1.100] 4x r1.52 [.060] 2x r1.63 [.064] d g s flange 9.78 [.385] 0.0381 [.0015] -a- 248-cases: h-30248-2_po c l c l 3.610.38 [.142.015] sph 1.57 [.062] [.370 ] +.004 ?.006 lid 9.40 +0.10 ?0.15
data sheet 10 of 11 rev. 04, 2007-10-31 PTFA191001E ptfa191001f confidential, limited internal distribution package outline specifications (cont.) package h-37248-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6 gold plating thickness: s, d, g - flange & leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products c l 0.0381 [.0015] 2x 12.70 [.500] 19.430.51 [.765.020] 19.810.20 [.780.008] sph 1.57 [.062] flange 9.78 [.385] s g d ( 45 x 2.72 [.107]) 20.57 [.810] -a- 3.610.38 [.142.015] 1.02 [.040] 2x 4.830.51 [.190.020] 248-cases: h-31248-2_po c l c l [r.020 ] +.015 ?.005 4x r0.508 +0.381 ?0.127 lid 9.40 +0.10 ?0.15 [.370 ] +.004 ?.006
data sheet 11 of 11 rev. 04, 2007-10-31 PTFA191001E/f confidential, limited internal distribution revision history: 2007-10-31 data sheet previous version: rev. 02, 2005-08-11, data sheet; rev. 03, 2007-06-25 page subjects (major changes since last revision) 1, 10 update company information. 1, 3, 9, 10 update to product v4, with new package technologies. update package outline diagrams. goldmos ? is a registered trademark of infineon technologies ag. edition 2007-10-31 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2004. all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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